Szczegóły publikacji
Opis bibliograficzny
Thermoelectric properties and electronic structure of Bi- and Ag-doped $Mg_{2}Si_{1-x}Ge_{x}$ compounds / K. Mars, H. Ihou-Mouko, G. Pont, J. TOBOŁA, H. Scherrer // Journal of Electronic Materials ; ISSN 0361-5235. — 2009 — vol. 38 no. 7 spec. iss., s. 1360–1364. — Bibliogr. s. 1364. — Publikacja dostępna online od: 2009-03-19. — J. Toboła - pierwsza afiliacja: Laboratoire de Physique des Matériaux Ecole des Mines, Parc de Saurupt, 54042 Nancy Cedex, France. — 27th International Conference on Thermoelectrics : August 3–7, 2008 : Corvallis, OR
Autorzy (5)
- Mars K.
- Ihou-Mouko H.
- Pont G.
- AGHToboła Janusz Stefan
- Scherrer H.
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 48747 |
|---|---|
| Data dodania do BaDAP | 2009-12-01 |
| Tekst źródłowy | URL |
| DOI | 10.1007/s11664-009-0735-1 |
| Rok publikacji | 2009 |
| Typ publikacji | referat w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Journal of Electronic Materials |
Abstract
Mg2Si1-x Ge (x) compounds were prepared from pure elements by melting in tantalum crucibles. The reaction was conducted under an inert gas in a special laboratory setup. Samples for thermoelectric measurements were formed by hot pressing. Structure and phase composition of the obtained materials were investigated by x-ray diffraction (XRD). Morphology and chemical composition were examined by scanning electron microscopy (SEM) and energy-dispersive x-ray spectroscopy (EDS), respectively. Thermoelectric properties, i.e., the Seebeck coefficient, the electrical conductivity, and the thermal conductivity, were measured in the temperature range of 500 K to 900 K. The effect of Bi and Ag doping on the thermoelectric performance of Mg-Si-Ge ternary compounds was investigated. The electronic structures of binary compounds were calculated using the Korringa-Kohn-Rostoker (KKR) method. The effects of disorder, including Ge substitution and Bi or Ag doping, were accounted for in the KKR method with coherent potential approximation calculations. The thermoelectric properties of doped Mg2Si1-x Ge (x) are discussed with reference to computed density of states as well as the complex energy band structure.