Szczegóły publikacji
Opis bibliograficzny
Molecular layer doping ZnO films as a novel approach to resistive oxygen sensors / Wojciech BULOWSKI, Robert P. Socha, Anna Drabczyk, Patryk Kasza, Piotr Panek, Marek WOJNICKI // Electronics [Dokument elektroniczny]. — Czasopismo elektroniczne ; ISSN 2079-9292 . — 2025 — vol. 14 iss. 3 art. no. 595, s. 1–21. — Wymagania systemowe: Adobe Reader. — Bibliogr. s. 17–21, Abstr. — Publikacja dostępna online od: 2025-02-02. — W. Bulowski, M. Wojnicki - dod. afiliacja: CBRTP SA Research and Development Center of Technology for Industry, Warszawa
Autorzy (6)
- AGHBulowski Wojciech
- Socha Robert P.
- Drabczyk Anna
- Kasza Patryk
- Panek Piotr
- AGHWojnicki Marek
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 157988 |
|---|---|
| Data dodania do BaDAP | 2025-03-10 |
| Tekst źródłowy | URL |
| DOI | 10.3390/electronics14030595 |
| Rok publikacji | 2025 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Creative Commons | |
| Czasopismo/seria | Electronics |
Abstract
In the modern world, gas sensors play a crucial role in sectors such as high-tech industries, medicine, and environmental monitoring. Among these fields, oxygen sensors are the most important. There are several types of oxygen sensors, including optical, magnetic, Schottky diode, and resistive (or chemoresistive) ones. Currently, most oxygen-resistive sensors (ORSs) described in the literature are fabricated as thick layers, typically deposited via screen printing, and they operate at high temperatures, often exceeding 700 °C. This work presents a novel approach utilizing atomic layer deposition (ALD) to create very thin layers. Combined with appropriate doping, this method aims to reduce the energy consumption of the sensors by lowering both the mass requiring heating and the operating temperature. The device fabricated using the proposed process demonstrates a response of 88.21 at a relatively low temperature of 450 °C, highlighting its potential in ORS applications based on doped ALD thin films.
