Szczegóły publikacji
Opis bibliograficzny
Evaluation of the electronic properties of atomic layer deposition-grown ge-doped zinc oxide thin films at elevated temperatures / Rafał Knura, Katarzyna Skibińska, Sylvester Sahayaraj, Marianna MARCISZKO-WIĄCKOWSKA, Jakub Gwizdak, Marek WOJNICKI, Piotr ŻABIŃSKI, Grzegorz Sapeta, Sylwester Iwanek, Robert P. Socha // Electronics [Dokument elektroniczny]. — Czasopismo elektroniczne ; ISSN 2079-9292. — 2024 — vol. 13 iss. 3 art. no. 554, s. 1–14. — Wymagania systemowe: Adobe Reader. — Bibliogr. s. 13–14, Abstr. — Publikacja dostępna online od: 2024-01-30. — M. Wojnicki - dod. afiliacja: CBRTP SA Research and Development Center of Technology for Industry, Warszawa, Poland
Autorzy (10)
- Knura Rafał
- Skibińska Katarzyna
- Sahayaraj Sylvester
- AGHMarciszko-Wiąckowska Marianna
- AGHGwizdak Jakub
- AGHWojnicki Marek
- AGHŻabiński Piotr
- Sapeta Grzegorz
- Iwanek Sylwester
- Socha Robert P.
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 151705 |
|---|---|
| Data dodania do BaDAP | 2024-03-13 |
| Tekst źródłowy | URL |
| DOI | 10.3390/electronics13030554 |
| Rok publikacji | 2024 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Creative Commons | |
| Czasopismo/seria | Electronics |
Abstract
The aim of this study was to determine the electronic properties of as-deposited ALD-grown Ge-doped zinc oxide thin films annealed at 523 K or 673 K. SEM, EDS, and ellipsometry measurements confirmed that the Ge-doped zinc oxide films with a thickness of around 100 nm and uniform composition were successfully obtained. GI-XRD measurements did not reveal phases other than the expected Wurtzite structure of the ZnO. The electronic properties, i.e., conductivity, charge carrier concentration, and mobility of the films, were evaluated using Hall effect measurements and explained based on corresponding XPS measurements. This work supports the theory that oxygen vacancies act as electron donors and contribute to the intrinsic n-type conductivity of ZnO. Also, it is shown that the effect of oxygen vacancies on the electronic properties of the material is stronger than the effect introduced by Ge doping.
