Szczegóły publikacji
Opis bibliograficzny
Fabrication and detailed analysis of 22.0% rear junction double-side TOPCon solar cell with front $SiO_x$ /Polysilicon selective emitter / Wook-Jin Choi, Young-Woo Ok, Kwan Hong Min, Ruohan Zhong, Sagnik Dasgupta, Vijaykumar D. Upadhyaya, Gabby De Luna, John Derek Arcebal, Pradeep PADHAMNATH, Ajeet Rohatgi // W: PVSC 52 [Dokument elektroniczny] : IEEE 52nd Photovoltaic Specialist Conference : 9-14 June 2024, Seattle, USA. — Wersja do Windows. — Dane tekstowe. — [Piscataway] : IEEE, cop. 2024. — (Photovoltaic Specialists Conference ; ISSN 0160-8371). — Dod. ISBN: 978-1-6654-7582-2 (Print on Demand). — e-ISBN: 978-1-6654-6426-0. — S. 1778–1782. — Wymagania systemowe: Adobe Reader. — Bibliogr. s. 1781–1782, Abstr. — P. Padhamnath - dod. afiliacja: Solar Energy Research Institute of Singapore, Singapore
Autorzy (10)
- Choi Wook-Jin
- Ok Young-Woo
- Min Kwan Hong
- Zhong Ruohan
- Dasgupta Sagnik
- Upadhyaya Vijaykumar D.
- De Luna Gabby
- Arcebal John Derek
- AGHPadhamnath Pradeep
- Rohatgi Ajeet
Dane bibliometryczne
| ID BaDAP | 156885 |
|---|---|
| Data dodania do BaDAP | 2025-01-24 |
| Tekst źródłowy | URL |
| DOI | 10.1109/PVSC57443.2024.10749511 |
| Rok publikacji | 2024 |
| Typ publikacji | materiały konferencyjne (aut.) |
| Otwarty dostęp |  |
| Wydawca | Institute of Electrical and Electronics Engineers (IEEE) |
| Czasopismo/seria | Photovoltaic Specialists Conference |
Abstract
This paper presents a cost-effective and scalable fabrication process for high-quality selective double-side tunnel oxide passivating contact (DS-TOPCon) solar cells, featuring a front SiOx/Poly -Si selective emitter. A novel two-tier co-diffusion process simultaneously forms phosphorus-and boron-doped poly-Si layers on both sides in a single step, eliminating the need for additional masking and diffusion processes. The full-area DS-TOPCon cell precursors, fabricated through this rapid process, demonstrated the best iVoc of 738 mV and iFF of 86.3%. An inkj et-based patterning technique for the full-area front poly-Si, coupled with n-Si field re-passivation process, retains the passivation quality, and successfully transforms it into selective DS-TOPCon cell precursor. Initial device fabrication on large area Czochralski (Cz) n-Si wafers achieved 22.0% cell efficiency with 714 mV open-circuit voltage Voc ) after post-metallization treatments (laser enhanced contact optimization and light/heat treatment). These results suggest that with further process optimizations and improvements in material and contact properties, the efficiency of selective DS-TOPCon solar cells has potential to surpass 25%, making it a promising alternative to fabricate high-efficiency next-generation solar cells at low-cost.
