Szczegóły publikacji
Opis bibliograficzny
Formation of selective TOPCon front surface field with excellent passivation for high-efficiency back-junction solar cells / Sagnik Dasgupta, Pradeep PADHAMNATH, Wook-Jin Choi, Young-Woo Ok, Ajeet Rohatgi // W: PVSC 52 [Dokument elektroniczny] : IEEE 52nd Photovoltaic Specialist Conference : 9-14 June 2024, Seattle, USA. — Wersja do Windows. — Dane tekstowe. — [Piscataway] : IEEE, cop. 2024. — (Photovoltaic Specialists Conference ; ISSN 0160-8371). — Dod. ISBN: 978-1-6654-7582-2 (Print on Demand). — e-ISBN: 978-1-6654-6426-0. — S. 1253–1256. — Wymagania systemowe: Adobe Reader. — Bibliogr. s. 1256, Abstr.
Autorzy (5)
- Dasgupta Sagnik
- AGHPadhamnath Pradeep
- Choi Wook-Jin
- Ok Young-Woo
- Rohatgi Ajeet
Dane bibliometryczne
| ID BaDAP | 156883 |
|---|---|
| Data dodania do BaDAP | 2025-01-24 |
| Tekst źródłowy | URL |
| DOI | 10.1109/PVSC57443.2024.10748731 |
| Rok publikacji | 2024 |
| Typ publikacji | materiały konferencyjne (aut.) |
| Otwarty dostęp |  |
| Wydawca | Institute of Electrical and Electronics Engineers (IEEE) |
| Czasopismo/seria | Photovoltaic Specialists Conference |
Abstract
We propose a novel method to create a selective TOPCon front surface field for high-efficiency back junction solar cells. Our process involves depositing a phosphorus-doped polysilicon tunnel oxide passivated contact, which is then etched in the field region and coated with a dielectric material. The resulting structure has a shallow (∼50 nm) but heavily doped (Ns=6.5×1019cm−3) phosphorous diffusion in bulk Si, formed by a tailored heat treatment (840∘C/30min) of the n-TOPCon structure. This effectively eliminates the negative impact of surface recombination, while adding only 4 fA.cm−2 to the J0 due to bulk Auger recombination. Experimental validation shows that the front field area contributes a J0 of 7.5±3.1 fA.cm−2 , with the best-performing sample measuring 4.8 fA.cm−2 , closely matching our simulation estimates. A fabricated rear junction n-type solar cell with patterned n-TOPCon front contact demonstrated an efficiency of 20.9% with substantial room for improvement in contact optimization. Our approach offers passivation comparable to that of a full-area textured polysilicon contact, without incurring any optical losses in the field region. As a result, it is particularly well-suited for use in rear junction solar cells with efficiency exceeding 25% and can also be applied to interdigitated back-contact solar cells where front passivation plays a critical role.
