Szczegóły publikacji

Opis bibliograficzny

Characterization and modeling of thin n-Type and thick p-Type polysilicon passivated contacts for back-junction solar cells / Ruohan Zhong, Pradeep PADHAMNATH, Gabby De Luna, John Derek Dumaguin Arcebal, Vijaykumar Upadhyaya, Sagnik Dasgupta, Daniel L. Meier, Ajeet Rohatgi // W: PVSC 52 [Dokument elektroniczny] : IEEE 52nd Photovoltaic Specialist Conference : 9-14 June 2024, Seattle, USA. — Wersja do Windows. — Dane tekstowe. — [Piscataway] : IEEE, cop. 2024. — (Photovoltaic Specialists Conference ; ISSN 0160-8371). — Dod. ISBN: 978-1-6654-7582-2 (Print on Demand). — e-ISBN: 978-1-6654-6426-0. — S. 843–846. — Wymagania systemowe: Adobe Reader. — Bibliogr. s. 845–846, Abstr.

Autorzy (8)

  • Zhong Ruohan
  • AGHPadhamnath Pradeep
  • De Luna Gabby
  • Arcebal John Derek
  • Upadhyaya Vijaykumar D.
  • Dasgupta Sagnik
  • Meier Daniel L.
  • Rohatgi Ajeet

Dane bibliometryczne

ID BaDAP156882
Data dodania do BaDAP2025-01-24
Tekst źródłowyURL
DOI10.1109/PVSC57443.2024.10748857
Rok publikacji2024
Typ publikacjimateriały konferencyjne (aut.)
Otwarty dostęptak
WydawcaInstitute of Electrical and Electronics Engineers (IEEE)
Czasopismo/seriaPhotovoltaic Specialists Conference

Abstract

The surface passivation properties and open circuit voltage of a silicon solar cell can be enhanced by utilizing the tunnel oxide passivated contact (TOPCon) on both sides. However, the front side polysilicon thickness needs to be minimized to reduce the parasitic absorption, which may also influence the recombination current density (Jo) as well as contact resistivity. Therefore, in this paper, we investigated the tradeoff between absorption or Jsc loss, passivated and metallized Jo, and contact resistivity for very thin (20−50 μm) textured front n-TOPCon layers. This is studied as a function of screen-printed contact firing temperature in the range of 700∼750∘C . In addition, we also studied the impact of three different surface morphologies (planar, roughened, and textured) on the Jsc , J0 , and contact resistivity of the 250nm p-TOPCon on the rear side. We found that the roughened back surface lowers the contact resistivity by a factor of three, from 8 mΩ⋅cm2 to 2.8 mΩ⋅cm2 , relative to a planar surface, without appreciably deteriorating the unmetallized Jo and optical properties of the solar cell. Modeling and characterization showed that the textured back surface gives only a marginal improvement in contact resistivity compared to the roughened back but results in appreciable (0.45 mA/cm2) degradation in Jsc . Device modeling shows >21% screen-printed double-side TOPCon solar cell can be achieved for both planar and roughened rear side with a textured 20nm n-TOPCon on the front.

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fragment książki
#156883Data dodania: 24.1.2025
Formation of selective TOPCon front surface field with excellent passivation for high-efficiency back-junction solar cells / Sagnik Dasgupta, Pradeep PADHAMNATH, Wook-Jin Choi, Young-Woo Ok, Ajeet Rohatgi // W: PVSC 52 [Dokument elektroniczny] : IEEE 52nd Photovoltaic Specialist Conference : 9-14 June 2024, Seattle, USA. — Wersja do Windows. — Dane tekstowe. — [Piscataway] : IEEE, cop. 2024. — (Photovoltaic Specialists Conference ; ISSN 0160-8371). — Dod. ISBN: 978-1-6654-7582-2 (Print on Demand). — e-ISBN: 978-1-6654-6426-0. — S. 1253–1256. — Wymagania systemowe: Adobe Reader. — Bibliogr. s. 1256, Abstr.
fragment książki
#156885Data dodania: 24.1.2025
Fabrication and detailed analysis of 22.0% rear junction double-side TOPCon solar cell with front $SiO_x$ /Polysilicon selective emitter / Wook-Jin Choi, Young-Woo Ok, Kwan Hong Min, Ruohan Zhong, Sagnik Dasgupta, Vijaykumar D. Upadhyaya, Gabby De Luna, John Derek Arcebal, Pradeep PADHAMNATH, Ajeet Rohatgi // W: PVSC 52 [Dokument elektroniczny] : IEEE 52nd Photovoltaic Specialist Conference : 9-14 June 2024, Seattle, USA. — Wersja do Windows. — Dane tekstowe. — [Piscataway] : IEEE, cop. 2024. — (Photovoltaic Specialists Conference ; ISSN 0160-8371). — Dod. ISBN: 978-1-6654-7582-2 (Print on Demand). — e-ISBN: 978-1-6654-6426-0. — S. 1778–1782. — Wymagania systemowe: Adobe Reader. — Bibliogr. s. 1781–1782, Abstr. — P. Padhamnath - dod. afiliacja: Solar Energy Research Institute of Singapore, Singapore