Szczegóły publikacji
Opis bibliograficzny
A low-noise, low-power CMOS SOI readout front-end for silicon detectors leakage current compensation with capability / Y. Hu, G. DEPTUCH, R. Turchetta, C. Guo // IEEE Transactions on Circuits and Systems. — 2001 — vol. 48 no. 8, s. 1022–1030. — Bibliogr. s. 1030, Abstr.
Autorzy (4)
- Hu Y.
- AGHDeptuch Grzegorz
- Turchetta R.
- Guo C.
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 10991 |
|---|---|
| Data dodania do BaDAP | 2002-11-26 |
| Tekst źródłowy | URL |
| DOI | 10.1109/81.940194 |
| Rok publikacji | 2001 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | IEEE Transactions on Circuits and Systems, I, Fundamental Theory and Applications |
Abstract
A low-noise, low-power CMOS semiconductor on insulator (SOI) readout front-end aiming to dc coupling to silicon radiation detectors is presented in this paper. It is able to compensate the leakage current of detectors within a wide range up to 10 muA. While the presented solution does not significantly deteriorate the amplifier noise performance it complies with demands for low-noise readout system for silicon detectors. This front-end system includes a charge-sensitive amplifier, a semi-Gaussian CR-RC shaping amplifier and an output buffer. It has been simulated and implemented in a CMOS SOI-SIMOX process. For no leakage current, an input referred equivalent noise charge (ENC) of 426 electrons (rms) for 0 pF of detector capacitance with a noise slope of 40 electrons/pF, a peaking time of 50 ns, and a conversion gain of 23.4 mV/fC have been obtained.
