Szczegóły publikacji
Opis bibliograficzny
A fully integrated, low noise and low power BiCMOS front-end readout system for capacitive detectors / Chaoying-Christine Guo, Philippe Schmitt, Grzegorz DEPTUCH, Yongcai-Yann Hu // Analog Integrated Circuits and Signal Processing ; ISSN 0925-1030. — 2001 — vol. 28 iss. 3, s. 211–223. — Bibliogr. s. 222, Abstr.
Autorzy (4)
- Guo Chaoying-Christine
- Schmitt Philippe
- AGHDeptuch Grzegorz
- Hu Yongcai-Yann
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 10992 |
|---|---|
| Data dodania do BaDAP | 2002-11-26 |
| Tekst źródłowy | URL |
| DOI | 10.1023/A:1011283409193 |
| Rok publikacji | 2001 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Analog Integrated Circuits and Signal Processing |
Abstract
Bipolar transistors are interesting for low noise front-end readout systems when high speed and low power consumption are required. This paper presents a fully integrated, low noise front-end design for the future Large Hadron Collider (LHC) experiments using the radiation hard SOI BiCMOS process. In the present prototype, the input-referred Equivalent Noise Charge (ENC) of 990 electrons (rms) for 12 pF detector capacitance with a shaping time of 25 ns and power consumption of 1.4 mW/channel has been measured. The gain of this front-end is 90 mV/MIP (Minimum Ionisation Particle: 1 MIP = 3.84 fC) with non-linearity of less than 3% and linear input dynamic range is +/- 5 MIP. These results are obtained at room temperature and before irradiation. The measurements after irradiations by high intensity pion beam with an integrated flux of 1.0 x 10(14) pions/cm(2) are also presented in this paper.
