Szczegóły publikacji
Opis bibliograficzny
Optical and electrical properties of $Ti(Cr)O_{2}:N$ thin films deposited by magnetron co-sputtering / K. KOLLBEK, A. SZKUDLAREK, M. M. MARZEC, B. ŁYSOŃ-SYPIEŃ, M. CECOT, A. BERNASIK, M. RADECKA, K. ZAKRZEWSKA // Applied Surface Science ; ISSN 0169-4332. — Tytuł poprz.: Applications of Surface Science. — 2016 — vol. 380, s. 73–82. — Bibliogr. s. 81–82, Abstr. — Publikacja dostępna online od: 2016-02-10. — A. Bernasik – dod. afiliacja: ACMiN. — NANOSMAT 2015 : international conference on Surfaces, coatings and nano-structured materials : Manchester, UK, 12th–15th September 2015
Autorzy (8)
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 97978 |
|---|---|
| Data dodania do BaDAP | 2016-06-07 |
| Tekst źródłowy | URL |
| DOI | 10.1016/j.apsusc.2016.02.080 |
| Rok publikacji | 2016 |
| Typ publikacji | referat w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Applied Surface Science |
Abstract
The paper deals with TiO2-based thin films, doped with Cr and N, obtained by magnetron co-sputtering from titanium dioxide ceramic and chromium targets in Ar + N2 atmosphere. Co-doped samples of Ti(Cr)O2:N are investigated from the point of view of morphological, crystallographic, optical, and electrical properties. Characterization techniques such as: X-ray diffraction, XRD, scanning electron microscopy, SEM, atomic force microscopy, AFM, Energy Dispersive X-ray spectroscopy, EDX, X-ray photoelectron spectroscopy, XPS, optical spectrophotometry as well as impedance spectroscopy are applied. XRD reveals TiO2 and TiO2:N thin films are well crystallized as opposed to those of TiO2:Cr and Ti(Cr)O2:N. XPS spectra confirm that co-doping has been successfully performed with the biggest contribution from the lower binding energy component of N 1s peak at 396 eV. SEM analysis indicates uniform and dense morphology without columnar growth. Comparison between the band gaps indicates a significant shift of the absorption edge towards visible range from 3.69 eV in the case of non-stoichiometric Ti(Cr)O2−x:N to 2.78 eV in the case of stoichiometric Ti(Cr)O2:N which should be attributed to the incorporation of both dopants at substitutional positions in TiO2 lattice. Electrical conductivity of stoichiometric Ti(Cr)O2:N increases in comparison to co-doped nonstoichiometric TiO2−x thin film and reaches almost the same value as that of TiO2 stoichiometric film.
