Szczegóły publikacji
Opis bibliograficzny
Investigation of the influence on graphene by using electron-beam and photo-lithography / Jiyu Fan, J. M. Michalik, L. Casado, S. Roddaro, M. R. Ibarra, J. M. De Teresa // Solid State Communications ; ISSN 0038-1098 . — 2011 — vol. 151 iss. 21, s. 1574–1578. — Bibliogr. s. 1578, Abstr. — Publikacja dostępna online od: 2011-07-27. — J. M. Michalik - afiliacja: Universidad de Zaragoza, Spain
Autorzy (6)
- Fan Jiyu
- Michalik Jan Marek
- Casado Laura
- Roddaro Stefano
- Ibarra Manuel Ricardo
- de Teresa José María
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 96987 |
|---|---|
| Data dodania do BaDAP | 2016-03-30 |
| Tekst źródłowy | URL |
| DOI | 10.1016/j.ssc.2011.07.028 |
| Rok publikacji | 2011 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Solid State Communications |
Abstract
The changes in Raman spectra of graphene flakes after lithography processing are systematically investigated. It is found that substantial changes in the intensity of several Raman peaks are observed after lithography processes involving electron-sensitive and photon-sensitive resists. This finding is related to the generation of disorder and introduction of impurities in the graphene flakes. It is observed that the disorder induced after spin coating PMMA resist on the graphene flakes cannot be removed by acetone but can be eliminated by means of an annealing process. The use of the AZ6624 photo-sensitive resist produces Raman changes typical for amorphization. When using this resist, the disorder-induced changes in the Raman spectra persist even after the same annealing process, implying that the contamination caused by the used photo-sensitive resist is more difficult to eliminate. The present results emphasize the important role played by the lithography process, often taken for granted, in the physical properties of graphene. (C) 2011 Elsevier Ltd. All rights reserved.
