Szczegóły publikacji
Opis bibliograficzny
The chemical composition and band gap of amorphous Si:C:N:H layers / Barbara SWATOWSKA, Stanisława KLUSKA, Maria JURZECKA-SZYMACHA, Tomasz STAPIŃSKI, Katarzyna TKACZ-ŚMIECH // Applied Surface Science ; ISSN 0169-4332. — Tytuł poprz.: Applications of Surface Science. — 2016 — vol. 371, s. 91–95. — Bibliogr. s. 95, Abstr. — Publikacja dostępna online od: 2016-02-27
Autorzy (5)
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 96701 |
|---|---|
| Data dodania do BaDAP | 2016-03-10 |
| Tekst źródłowy | URL |
| DOI | 10.1016/j.apsusc.2016.02.198 |
| Rok publikacji | 2016 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Applied Surface Science |
Abstract
In this work we presented the correlation between the chemical composition of amorphous Si:C:N:H layers of various content of silicon, carbon and nitrogen, and their band gap. The series of amorphous Si:C:N:H layers were obtained by plasma assisted chemical vapour deposition method in which plasma was generated by RF (13.56 MHz, 300 W) and MW (2.45 GHz, 2 kW) onto monocrystalline silicon Si(001) and borosilicate glass. Structural studies were based on FTIR transmission spectrum registered within wavenumbers 400–4000 cm−1. The presence of Sisingle bondC, Sisingle bondN, Csingle bondN, Cdouble bond; length as m-dashN, Cdouble bond; length as m-dashC, Ctriple bond; length of mdashN, Sisingle bondH and Csingle bondH bonds was shown. The values band gap of the layers have been determined from spectrophotometric and ellipsometric measurements. The respective values are contained in the range between 1.64 eV – characteristic for typical semiconductor and 4.21 eV – for good dielectric, depending on the chemical composition and atomic structure of the layers.
