Szczegóły publikacji
Opis bibliograficzny
Effect of MgO thickness and bias voltage polarity on frequency response of tunneling magnetoresistance sensors with perpendicular anisotropy / M. DĄBEK, P. WIŚNIOWSKI // Journal of Applied Physics ; ISSN 0021-8979. — 2015 — vol. 117 iss. 17, s. 17A319-1–17A319-3. — Bibliogr. s. 17A319-3
Autorzy (2)
Dane bibliometryczne
| ID BaDAP | 88614 |
|---|---|
| Data dodania do BaDAP | 2015-04-24 |
| Tekst źródłowy | URL |
| DOI | 10.1063/1.4915104 |
| Rok publikacji | 2015 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Journal of Applied Physics |
Abstract
We investigate the frequency response of CoFeB/MgO/CoFeB based tunneling magnetoresistance sensors with the perpendicular anisotropy. The 3 dB cut-off frequency (f(3dB)) strongly and non-monotonically depends on resistance-area product (RA), which is controlled by MgO thickness. Both high and low RA sensors achieved wide frequency bandwidth; however, we observed a maximum f(3dB) of 45MHz at around 20 k Omega mu m(2). The bandwidth of the sensors increases with bias voltage of both polarity and is higher under positive polarity. This opens possibilities of using the sensors for high-speed magnetic field sensing and for improving their bandwidth by tuning RA and the bias. (C) 2015 AIP Publishing LLC.
