Szczegóły publikacji
Opis bibliograficzny
Reduction of low frequency magnetic noise by voltage-induced magnetic anisotropy modulation in tunneling magnetoresistance sensors / P. WIŚNIOWSKI, M. DĄBEK, W. SKOWROŃSKI, T. STOBIECKI, S. Cardoso, P. P. Freitas // Applied Physics Letters ; ISSN 0003-6951. — 2014 — vol. 105 iss. 8 art. no. 082404, s. 082404-1–082404-4. — Bibliogr. s. 082404-4, Abstr. — Publikacja dostępna online od: 2014-08-27
Autorzy (6)
- AGHWiśniowski Piotr
- AGHDąbek Michał
- AGHSkowroński Witold
- AGHStobiecki Tomasz
- Cardoso Susana
- Freitas Paulo P.
Dane bibliometryczne
| ID BaDAP | 83639 |
|---|---|
| Data dodania do BaDAP | 2014-09-25 |
| Tekst źródłowy | URL |
| DOI | 10.1063/1.4894172 |
| Rok publikacji | 2014 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Applied Physics Letters |
Abstract
We demonstrate the reduction and control of magnetic noise by voltage-induced perpendicular anisotropy modulation in CoFeB/MgO/CoFeB sensors. The noise decreases with the increase of the perpendicular anisotropy energy induced by the bias voltage polarity reversal. The bias reversal between -1 and +1 V results in a reduction of the normalized 1/f magnetic noise parameters by a factor of 7.3 and the thermal magnetic noise by a factor of 6.8. In the state of the highest field sensitivity, the lowest normalized 1/f magnetic noise parameter reaches 6.45 x 10(-14) mu m(3)T. The results indicate that voltage-induced anisotropy modulation can be used to control and suppress magnetization fluctuations in the sensing layer and thus, significantly reduce the magnetic noise. (C) 2014 AIP Publishing LLC.
