Szczegóły publikacji
Opis bibliograficzny
Tunneling processes in thin MgO magnetic junctions / J. M. Teixeira, J. Ventura, J. P. Araujo, J. B. Sousa, P. WIŚNIOWSKI, P. P. Freitas // Applied Physics Letters ; ISSN 0003-6951. — 2010 — vol. 96 no. 26, s. 262506-1–262506-3. — Bibliogr. s. 262506-3. — Publikacja dostępna online od: 2010-06-29. — P. Wiśniowski – dod. afiliacja: INESC-MN and IN-Institute of Nanoscience and Nanotechnology, Portugal
Autorzy (6)
- Teixeira José Miguel
- Ventura João Oliveira
- Araujo João Pedro
- Sousa João Bessa
- AGHWiśniowski Piotr
- Freitas Paulo P.
Dane bibliometryczne
| ID BaDAP | 54875 |
|---|---|
| Data dodania do BaDAP | 2010-11-22 |
| Tekst źródłowy | URL |
| DOI | 10.1063/1.3458701 |
| Rok publikacji | 2010 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Applied Physics Letters |
Abstract
Magnetic tunnel junctions MTJs with MgO barriers are used in a variety of applications, from read heads to novel microwave devices. In this work, we probed the temperature T dependence of the electrical transport of sputtered CoFeB/MgO/CoFeB MTJs with different barrier thicknesses tb=0.75–1.35 nm. We show evidence that spin-polarized direct elastic tunneling is the dominant mechanism determining the T-dependence of the tunnel conductance G and magnetoresistance for tb0.85 nm. Also, the electronic thermal smearing near the Fermi level plays a key role in GT. We observe the onset of pinholes for MTJs with 0.75 nm of MgO, with a transition to metallic-like transport.
