Szczegóły publikacji
Opis bibliograficzny
Electroforming, magnetic and resistive switching in $MgO-based$ tunnel junctions / J. M. Teixeira, J. Ventura, R. Fermento, J. P. Araujo, J. B. Sousa, P. WIŚNIOWSKI, P. P. Freitas // Journal of Physics . D, Applied Physics ; ISSN 0022-3727. — 2009 — vol. 42 iss. 10, s. 105407-1– 105407-4. — Bibliogr. s. 105407-4, Abstr.
Autorzy (7)
- Teixeira José Miguel
- Ventura João Oliveira
- Fermento R.
- Araujo João Pedro
- AGHWiśniowski Piotr
- Sousa João Bessa
- Freitas Paulo P.
Dane bibliometryczne
| ID BaDAP | 48081 |
|---|---|
| Data dodania do BaDAP | 2009-11-02 |
| Tekst źródłowy | URL |
| DOI | 10.1088/0022-3727/42/10/105407 |
| Rok publikacji | 2009 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Journal of Physics, D, Applied Physics |
Abstract
Magnetic tunnel junctions (MTJs) are under investigation since they offer great potential for applications in magnetic memories. An interesting effect in TJs concerns non-volatile resistive switching of non-magnetic origin. We report magnetic (magnetoresistance) and structural (resistive; R) switching in MgO-based MTJs (barrier thicknesses t = 0.75, 1.35 nm). As-grown MTJs display R-switching only in the thinnest series, while thicker barrier samples need an electroforming step for R-switching to occur. Forming changes the electrical resistance temperature dependence, from tunnel- to metallic-like, revealing the formation of conductive bridges across the barrier which, leading to local high electrical fields and temperatures, are essential for resistive switching. © 2009 IOP Publishing Ltd.
