Szczegóły publikacji
Opis bibliograficzny
Interlayer exchange coupling and current induced magnetization switching in magnetic tunnel junctions with MgO wedge barrier / Witold SKOWROŃSKI, Tomasz STOBIECKI, Jerzy WRONA, Karsten Rott, Andy Thomas, Günter Reiss, Sebastiaan van Dijken // Journal of Applied Physics ; ISSN 0021-8979 . — 2010 — vol. 107 no. 9 Pt. 1, s. 093917-1–093917-4. — Bibliogr. s. 093917-4
Autorzy (7)
- AGHSkowroński Witold
- AGHStobiecki Tomasz
- AGHWrona Jerzy
- Rott Karsten
- Thomas Andy
- Reiss Günter
- van Dijken Sebastiaan
Dane bibliometryczne
| ID BaDAP | 53196 |
|---|---|
| Data dodania do BaDAP | 2010-09-13 |
| Tekst źródłowy | URL |
| DOI | 10.1063/1.3387992 |
| Rok publikacji | 2010 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Journal of Applied Physics |
Abstract
Current induced magnetization switching and interlayer exchange coupling (IEC) in sputtered CoFeB/MgO/CoFeB exchange-biased magnetic tunnel junctions with an extremely thin (0.96-0.62 nm) MgO wedge barrier is investigated. The IEC is found to be ferromagnetic for all samples and the associated energy increases exponentially down to a barrier thickness of 0.7 nm. Nanopillars with resistance area product ranging from 1.8 to 10 μ m2 and sizes of 0.13 μ m2 down to 0.03 μ m2 and tunneling magnetoresistance values of up to 170% were prepared. We found, that the critical current density increases with decreasing MgO barrier thickness. The experimental data and theoretical estimations show that the barrier thickness dependence of the spin transfer torque can largely be explained by a reduction in the tunnel current polarization at very small barrier thickness. © 2010 American Institute of Physics.
