Szczegóły publikacji
Opis bibliograficzny
Field detection in single and double barrier MgO magnetic tunnel junction sensors / J. M. Almeida, P. WIŚNIOWSKI, P. P. Freitas // Journal of Applied Physics ; ISSN 0021-8979 . — 2008 — vol. 103 iss. 7, s. 07E922-1–07E922-3. — Bibliogr. s. 07E922-3. — Brak afiliacji AGH. — 52nd Annual conference on Magnetism and magnetic materials : Tampa, Florida, November 05-09, 2007
Autorzy (3)
- Almeida Joanna M.M.M. De
- Wiśniowski Piotr
- Freitas Paulo P.
Dane bibliometryczne
| ID BaDAP | 42671 |
|---|---|
| Data dodania do BaDAP | 2009-01-19 |
| Tekst źródłowy | URL |
| DOI | 10.1063/1.2836721 |
| Rok publikacji | 2008 |
| Typ publikacji | referat w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Journal of Applied Physics |
Abstract
Single and double barrier MgO based magnetic tunnel junction sensors were processed with area of 200 μ m2 and small aspect ratios (<2). These sensors present resistance area products ranging from 10 to 70 k μ m2 and tunneling magnetoresistance (TMR) values of up to 160%. Sensor linearization was mostly obtained by thinning the CoFeB free layer to 15.5 A, close to the free layer transition from ferromagnetic to superparamagnetic behavior. Three different thicknesses were studied for the free layer CoFeB: 1.55, 1.8, and 3 nm. The CoFeB thickness decrease required for the linearization implies a loss in TMR. Field detection range of ∼80 pT Hz0.5 was obtained for both double and single barrier sensors (at 500 KHz). Out of the 1f regime, the detection range decreases to ∼2 pT Hz0.5 for the single barrier sensor. The field detection dependence on bias voltage was also studied at 500 KHz and outside the 1f dominated regime.
