Szczegóły publikacji
Opis bibliograficzny
Technology of SOI monolithic active pixel detectors for improvement of I–V caracteristics and reliability / H. NIEMIEC, W. KUCEWICZ, M. SAPOR, P. Grabiec, K. Kucharski, J. Marczewski, D. Tomaszewski, B. M. Armstrong, M. Bain, P. Baine, H. S. Gamble, S. L. Suder, F. H. Ruddell // W: MIXDES 2008 : MIXed DESign of integrated circuits and systems : proceedings of the 15th international conference : Poznań, Poland, 19–21 June, 2008 / ed. Andrzej Napieralski. — Łódź : Department of Microelectronics and Computer Science, Technical University of Łódź, cop. 2008 + CD-ROM. — ISBN: 83-922632-7-8. — S. 463–465. — Bibliogr. s. 465, Abstr. — W bazie Web of Science ISBN: 978-83-922632-7-2
Autorzy (13)
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 39664 |
|---|---|
| Data dodania do BaDAP | 2008-07-14 |
| Rok publikacji | 2008 |
| Typ publikacji | materiały konferencyjne (aut.) |
| Otwarty dostęp |  |
Abstract
Monolithic active pixel detectors in SOI (Silicon On Insulator) technology are novel sensors of ionizing radiation, which exploit SOI substrates for the integration of readout electronics and a pixel detector. Some important parameters of the devices are breakdown voltage and leakage current. The paper addresses recent developments in the field of the technology of the SOI detectors, which lead to improvement of reliability and current-voltage characteristics of the sensors.
