Szczegóły publikacji
Opis bibliograficzny
Full-size monolithic active pixel sensors in SOI technology – design considerations, simulations and measurements results / H. NIEMIEC, M. JASTRZĄB, W. KUCEWICZ, K. Kucharski, J. Marczewski, M. SAPOR, D. Tomaszewski // Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, spectrometers, detectors and associated equipment ; ISSN 0168-9002. — 2006 — vol. 568, s. 153–158. — Bibliogr. s. 158, Abstr. — 10th European Symposium on Semiconductor Detectors : Wildbad Kreuth, Germany, June 12–16, 2005
Autorzy (7)
- AGHNiemiec Halina
- AGHJastrząb Marcin
- AGHKucewicz Wojciech
- Kucharski K.
- Marczewski Jacek
- AGHSapor Maria
- Tomaszewski Daniel
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 32820 |
|---|---|
| Data dodania do BaDAP | 2007-05-07 |
| DOI | 10.1016/j.nima.2006.05.224 |
| Rok publikacji | 2006 |
| Typ publikacji | referat w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Nuclear Instruments & Methods in Physics Research, Section A, Accelerators Spectrometers, Detectors and Associated Equipment |
Abstract
The paper addresses development of full-size monolithic active pixel detectors exploiting silicon-on-insulator (SOI) technology for the integration of a radiation detector and readout electronics in one entity. A general overview of the sensor design is presented and then considerations of the interaction between the readout and sensitive part of the SOI active sensor are discussed. The layout solution used in the design of the full-size prototypes to overcome the problem of the crosstalk between the readout electronics and the detector are reported. Preliminary measurements results of the first full-size prototypes of SOI sensors are also reported. (c) 2006 Elsevier B.V. All rights reserved.
