Szczegóły publikacji
Opis bibliograficzny
Technology development for SOI monolithic pixel detectors / J. Marczewski [et al.], W. KUCEWICZ, H. NIEMIEC // Nuclear Instruments & Methods in Physics Research . Section A, Accelerators, spectrometers, detectors and associated equipment ; ISSN 0168-9002. — 2006 — vol. 560 iss. 1, s. 26–30. — Bibliogr. s. 30, Abstr. — 13th International Workshop on Vertex Detectors : Menaggio, ITALY, SEP 13-18, 2004
Autorzy (11)
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 32828 |
|---|---|
| Data dodania do BaDAP | 2007-05-07 |
| Tekst źródłowy | URL |
| DOI | 10.1016/j.nima.2005.11.194 |
| Rok publikacji | 2006 |
| Typ publikacji | referat w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Nuclear Instruments & Methods in Physics Research, Section A, Accelerators Spectrometers, Detectors and Associated Equipment |
Abstract
A monolithic detector of ionizing radiation has been manufactured using silicon on insulator (SOI) wafers with a high-resistivity substrate. In our paper the integration of a standard 3 mu m CMOS technology, originally designed for bulk devices, with fabrication of pixels in the bottom wafer of a SOT substrate is described. Both technological sequences have been merged minimizing thermal budget and providing suitable properties of all the technological layers. The achieved performance proves that fully depleted monolithic active pixel matrix might be a viable option for a wide spectrum of future applications.
