Szczegóły publikacji
Opis bibliograficzny
AIN thin films prepared by optical emission spectroscopy-controlled reactive sputtering / A. BRUDNIK, A. CZAPLA, E. KUSIOR // Thin Solid Films ; ISSN 0040-6090 . — 2005 — vol. 478 iss. 1–2, s. 67–71. — Bibliogr. s. 71, Abstr.
Autorzy (3)
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 37034 |
|---|---|
| Data dodania do BaDAP | 2008-02-04 |
| Tekst źródłowy | URL |
| DOI | 10.1016/j.tsf.2004.10.004 |
| Rok publikacji | 2005 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Thin Solid Films |
Abstract
AIN films have been deposited by direct current reactive magnetron sputtering using optical emission spectroscopy to control reactive gas (nitrogen) flow. For nitrogen to argon flow ratio between 1:2.5 and 1:2, we have deposited transparent films of aluminium nitride with relatively high deposition rates in the range of 0.3-0.7 nm/s. At the highest deposition rate, we observed the influence of metallic aluminium admixture on the optical properties of films. Free aluminium fraction decreases with increasing substrate temperature during deposition.
