Szczegóły publikacji
Opis bibliograficzny
Investigations of structure and electrical properties of $TiO_{2}/CuO$ thin film heterostructures / Damian Wojcieszak, Agata Obstarczyk, Jarosław Domaradzki, Danuta Kaczmarek, Katarzyna ZAKRZEWSKA, Roman Pastuszek // Thin Solid Films ; ISSN 0040-6090. — 2019 — vol. 690 art. no. 137538, s. 1–5. — Bibliogr. s. 5, Abstr. — Publikacja dostępna online od: 2019-09-05
Autorzy (6)
- Wojcieszak Damian
- Obstarczyk Agata
- Domaradzki Jarosław
- Kaczmarek Danuta
- AGHZakrzewska Katarzyna
- Pastuszek Roman
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 125015 |
|---|---|
| Data dodania do BaDAP | 2019-10-28 |
| Tekst źródłowy | URL |
| DOI | 10.1016/j.tsf.2019.137538 |
| Rok publikacji | 2019 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Thin Solid Films |
Abstract
Three sets of TiO2/CuO thin-film heterostructures with various thickness of TiO2 layer equal to 35 nm, 70 nm and 90 nm were deposited using reactive magnetron sputtering method. Morphology, structural, optical and electrical properties of as-prepared thin-film heterostructures were investigated. Structural investigations showed that thin film based on copper oxides was nanocrystalline and had monoclinic CuO structure. The crystallite size was equal to 11.8 nm. In the case of TiO2 film amorphous nature was observed. All prepared TiO2/CuO heterostructures were well transparent (above 80%) and exhibit the p-type of electrical conduction. Moreover, it was found that the thickness of the top TiO2 film had an effect on the resistance and value of the Seebeck coefficient of prepared oxide heterostructures. Performed measurements of electrical properties revealed that the resistance of as-deposited thin-film structures was increasing with an increase in the TiO2 thin film thickness in the range from 16 MΩ to 25 MΩ. Simultaneously an abnormal decrease in the value of the Seebeck coefficient has been observed. © 2019 Elsevier B.V.
