Szczegóły publikacji
Opis bibliograficzny
$ZnO$ thin films prepared by high pressure magnetron sputtering / H. CZTERNASTEK // Opto-Electronics Review / Stowarzyszenie Elektryków Polskich, Wojskowa Akademia Techniczna. Warszawa ; ISSN 1230-3402. — 2004 — vol. 12 no. 1, s. 49–52. — Bibliogr. s. 52
Autor
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 20939 |
|---|---|
| Data dodania do BaDAP | 2005-03-18 |
| Tekst źródłowy | URL |
| Rok publikacji | 2004 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Creative Commons | |
| Czasopismo/seria | Opto-Electronics Review |
Abstract
Undoped and Al-doped ZnO films were prepared by a high pressure dc magnetron sputtering technique on glass substrates at a temperature of 470 K. Plasma-emission monitoring was used to stabilize oxygen flow to the deposition chamber The effect of the total pressure during deposition and doping level on the structural, electrical and optical properties of the films was investigated. No preferred orientation was observed in the case of films prepared at low pressures. ZnO films deposited at a total pressures above 5 Pa and with a doping level up to 3 at.% Al had highly oriented crystallites with a c-axis normal to the substrate. These films with the electrical resistivity of 2x10(-3) Omegacm and the rms roughness of about 20 nm exhibited an average transmission of 81 % over the visible range. At higher doping levels the preferred orientation gradually disappeared, the carrier concentration increased by a small amount, but the Hall mobility decreased drastically because of the ionised impurity scattering and the lack of oriented growth.
