Szczegóły publikacji
Opis bibliograficzny
“Interfacial organization of graphene oxide–polyelectrolyte multilayers with tunable memristive behavior” / Tomasz Kruk, Anna KOSTECKA, Wojciech WIECZOREK, Anna Chrząszcz, Tomasz MAZUR, Michał SZUWARZYŃSKI // Carbon ; ISSN 0008-6223 . — 2027 — vol. 261 Pt. A art. no. 122019, s. 1–9. — Bibliogr. s. 8–9, Abstr. — Publikacja dostępna online od: 2026-08-24. — W. Wieczorek - dod. afiliacja: AGH University of Krakow, Academic Centre for Materials and Nanotechnology
Autorzy (6)
- Kruk Tomasz
- AGHKostecka Anna
- AGHWieczorek Wojciech
- Chrząszcz Anna
- AGHMazur Tomasz
- AGHSzuwarzyński Michał
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 169783 |
|---|---|
| Data dodania do BaDAP | 2026-09-07 |
| Tekst źródłowy | URL |
| DOI | 10.1016/j.carbon.2026.122019 |
| Rok publikacji | 2027 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Creative Commons | |
| Czasopismo/seria | Carbon |
Abstract
Layer-by-layer (LbL) assembled graphene oxide–polyelectrolyte (GO–PE) multilayers were fabricated on indium tin oxide substrates and systematically investigated in terms of structure, morphology, and resistive switching behavior. Quartz crystal microbalance with dissipation monitoring (QCM-D) confirmed controlled and reproducible growth of GO–PDADMAC and GO–PEI structures, with higher mass incorporation observed for the GO–PEI system. UV–Vis spectroscopy revealed the linear increase in absorbance versus bilayer number, confirming uniform film formation and progressive electronic coupling between adjacent GO sheets. Microscopic analysis (SEM and AFM) demonstrated complete substrate coverage after four bilayers and parallel stacking of GO nanoflakes with single-layer thickness of ∼1.1 nm. Increased surface roughness and mass loading in GO–PEI films indicated stronger GO–polyelectrolyte interactions. Electrical characterization showed reproducible bipolar resistive switching with well-defined low- and high-resistance states. A transition from ohmic to space-charge-limited current (SCLC) conduction was observed beyond the switching threshold (±1.2–1.5 V), indicating trap-controlled transport. Pulse measurements demonstrated stable and fully reversible switching up to ±2.4 V. Notably, GO–PEI systems exhibited more gradual and controllable potentiation behavior compared to GO–PDADMAC, highlighting their potential for analog switching and neuromorphic applications. The results establish structure–property relationships in GO-based LbL multilayers and demonstrate their suitability as tunable carbon-based memristive platforms.
