Szczegóły publikacji
Opis bibliograficzny
Influence of stoichiometric deviation and temperature on electron-attempt-to-escape frequency in non-stoichiometric titanium dioxide thin films / Karol KULINOWSKI, Katarzyna PŁACHETA, Marta RADECKA, Bartłomiej J. SPISAK // Journal of Physical Chemistry . C ; ISSN 1932-7447. — 2026 — vol. 130 iss. 22, s. 7805–7811. — Bibliogr. s. 7811, Abstr. — Publikacja dostępna online od: 2026-05-19
Autorzy (4)
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 168330 |
|---|---|
| Data dodania do BaDAP | 2026-07-08 |
| Tekst źródłowy | URL |
| DOI | 10.1021/acs.jpcc.6c01477 |
| Rok publikacji | 2026 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Creative Commons | |
| Czasopismo/seria | Journal of Physical Chemistry, C |
Abstract
The frequency formula for hopping electrons between randomly distributed oxygen vacancies within the variable-range-hopping model of Mott is derived, and the attempt-to-escape frequency is then extracted as a function of deviation from stoichiometry and temperature. These results are applied to nonstoichiometric titanium oxide thin films, with deviations from stoichiometry varying by 7 orders of magnitude relative to the stoichiometric counterpart and over a temperature range of 160–290 K. It is shown that the attempt-to-escape frequency decreases with increasing stoichiometry deviation and simultaneously weakly increases with increasing temperature. These results are qualitatively explained by using a microscopic view of an electron interacting with defective lattice vibrations.
