Szczegóły publikacji
Opis bibliograficzny
Enhancement and anisotropy of electron Landé factor due to spin-orbit interaction in semiconductor nanowires / Julian Czarnecki, Andrea Bertoni, Guido Goldoni, Paweł WÓJCIK // Physical Review. B ; ISSN 2469-9950. — Tytuł poprz.: Physical Review B, Condensed Matter and Materials Physics ; ISSN: 1098-0121. — 2024 — vol. 109 iss. 8 art. no. 085411, s. 085411-1–085411-13. — Bibliogr. s. 085411-12–085411-13, Abstr.
Autorzy (4)
- AGHCzarnecki Julian
- Bertoni Andrea
- Goldoni Guido
- AGHWójcik Paweł
Dane bibliometryczne
| ID BaDAP | 152144 |
|---|---|
| Data dodania do BaDAP | 2024-03-19 |
| Tekst źródłowy | URL |
| DOI | 10.1103/PhysRevB.109.085411 |
| Rok publikacji | 2024 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Creative Commons | |
| Czasopismo/seria | Physical Review, B |
Abstract
We investigate the effective Landé factor in semiconductor nanowires with strong Rashba spin-orbit coupling. Using the k·p theory and the envelope function approach we derive a conduction band Hamiltonian where g∗ is explicitly related to the spin-orbit coupling constants αR. Our model includes orbital effects from the Rashba spin-orbit term, leading to a significant enhancement of the effective Landé factor which is naturally anisotropic. For nanowires based on the low-gap, high spin-orbit coupled material InSb, we investigate the anisotropy of the effective Landé factor with respect to the magnetic field direction, exposing a twofold symmetry for the bottom gate architecture. The anisotropy results from the competition between the localization of the envelope function and the spin polarization of the electronic state, both determined by the magnetic field direction.
