Szczegóły publikacji
Opis bibliograficzny
Tuning Rashba spin-orbit coupling in homogeneous semiconductor nanowires / Paweł WÓJCIK, Andrea Bertoni, Guido Goldoni // Physical Review. B ; ISSN 2469-9950. — Tytuł poprz.: Physical Review B, Condensed Matter and Materials Physics ; ISSN: 1098-0121. — 2018 — vol. 97 iss. 16, s. 165401-1–165401-11. — Bibliogr. s. 165401-10–165401-11. — Publikacja dostępna online od: 2018-04-02
Autorzy (3)
- AGHWójcik Paweł
- Bertoni Andrea
- Goldoni Guido
Dane bibliometryczne
| ID BaDAP | 113642 |
|---|---|
| Data dodania do BaDAP | 2018-05-14 |
| Tekst źródłowy | URL |
| DOI | 10.1103/PhysRevB.97.165401 |
| Rok publikacji | 2018 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Physical Review, B |
Abstract
We use k . p theory to estimate the Rashba spin-orbit coupling (SOC) in large semiconductor nanowires. We specifically investigate GaAs-and InSb-based devices with different gate configurations to control symmetry and localization of the electron charge density. We explore gate-controlled SOC for wires of different size and doping, and we show that in high carrier density SOC has a nonlinear electric field susceptibility, due to large reshaping of the quantum states. We analyze recent experiments with InSb nanowires in light of our calculations. Good agreement is found with the SOC coefficients reported in Phys. Rev. B 91, 201413(R) (2015), but not with the much larger values reported in Nat. Commun. 8, 478 (2017). We discuss possible origins of this discrepancy.