Szczegóły publikacji
Opis bibliograficzny
Role of the oxidizing Co-reactant in Pt growth by atomic layer deposition using $MeCpPtMe_{3}$ and $O_{2}/O_{3}/O_{2}$-Plasma / Jin Li, Sylwia KLEJNA, Matthias M. Minjauw, Jolien Dendooven, Christophe Detavernier // Journal of Physical Chemistry. C ; ISSN 1932-7447. — 2024 — vol. 128 iss. 6, s. 2449–2462. — Bibliogr. s. 2460-2462, Abstr. — Publikacja dostępna online od: 2024-01-31
Autorzy (5)
- Li Jin
- AGHKlejna Sylwia
- Minjauw Matthias M.
- Dendooven Jolien
- Detavernier Christophe
Dane bibliometryczne
| ID BaDAP | 152053 |
|---|---|
| Data dodania do BaDAP | 2024-04-06 |
| Tekst źródłowy | URL |
| DOI | 10.1021/acs.jpcc.3c07568 |
| Rok publikacji | 2024 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Creative Commons | |
| Czasopismo/seria | Journal of Physical Chemistry, C |
Abstract
Atomic layer deposition (ALD) of Pt using MeCpPtMe3 and the O2/O3/O2-plasma (O2*) at 300 °C is investigated with in vacuo X-ray photoelectron spectroscopy (XPS) and density functional theory (DFT) to gain a better understanding of the Pt growth mechanism. Most notably, the chemical state of the surface Pt atoms and the role of surface O species in Pt growth are revealed. In the MeCpPtMe3/O2 process, the surface Pt atoms remain in a metallic Pt0 state throughout the ALD cycle, and the surface O species generated by the O2 exposure only exist as unstable adatoms, desorbing in vacuum. As for the O3/O2* processes, the surface Pt layer is oxidized to a mixture of Pt0, Pt2+O and Pt4+O2 upon O3/O2* exposure and then fully reduced to Pt0 during the precursor exposure. Surface Pt oxides are stable in a vacuum but can be reduced by hydrocarbon vapors. Quantification analysis shows that the O3/O2* processes have a much higher surface O species content than the O2 process after the coreactant exposure, favoring precursor ligand combustion over dehydrogenation in the next precursor exposure and leading to lower surface C density after the precursor pulse. DFT reveals differences in the combustion mechanism for Me vs Cp species, during the metal precursor and coreactant pulses. Importantly, the differences in the surface O content do not significantly affect the growth per cycle. Moreover, the MeCpPtMe3/O2 process with surface O species and a tailored MeCpPtMe3/O2 process without surface O species, both at 300 °C, yield nearly identical growth rates and as-deposited Pt with the same chemical state. This indicates that surface O species present before the precursor exposure have little impact on the overall Pt growth, in contrast to a previous assumption.
