Szczegóły publikacji
Opis bibliograficzny
Low-temperature carrier transport in magnetic field in sandwich-like graphene/Co nanoparticles/graphene structure / Alexander K. Fedotov, Uladzislaw E. GUMIENNIK, Julia A. Fedotova, Janusz PRZEWOŹNIK, Czesław KAPUSTA // Physica. E, Low-Dimensional Systems & Nanostructures ; ISSN 1386-9477. — 2024 — vol. 155 art. no. 115833, s. 1-9. — Bibliogr. s. 8-9, Abstr. — Publikacja dostępna online od: 2023-10-12
Autorzy (5)
- Fedotov Alexander K.
- AGHGumiennik Władysław
- Fedotova J. A.
- AGHPrzewoźnik Janusz
- AGHKapusta Czesław
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 150515 |
|---|---|
| Data dodania do BaDAP | 2024-01-10 |
| Tekst źródłowy | URL |
| DOI | 10.1016/j.physe.2023.115833 |
| Rok publikacji | 2024 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Physica, E, Low Dimensional Systems & Nanostructures |
Abstract
The improved analysis of carrier transport in the single-layer graphene and hybrid structures like graphene/Co nanoparticles (NPs) and graphene/Co NPs/graphene has been conducted. The temperature and magnetic field dependences of the sheet resistance RSq (T, B) and/or conductivity σSq (T, В) has shown the coexistence of negative (NMR) and positive (PMR) contributions in magnetoresistive effect in all the samples under study. The dependences of RSq (T, B) and/or σSq (T, В) were analyzed in the framework of some combinations of 5 models relating to quantum corrections (QCs) to Drude conductivity theory and different hopping models for variable range hopping (VRH) regimes. It was shown, in particular, that in the region of NMR effect below 75 K and in fields B < (0.5–1) T, σSq (T, В) dependences obey the combination of QCs theory (at induction <100 mT) and conduction by coherent hopping over localized states in the VRH regime at T < 20 K. In this case, with the phase breaking time of the wave function it follows the power-like law τφ(Т) ∼ T-p with the exponent p ≈ 1. These dependences also allowed to estimate the values of electron concentration n(T) in the structures studied, which were close to the values in the undoped graphene near the neutrality point. In the region of the PMR effect, the electrical resistance of the structures studied increases linearly with increasing B without saturation. This behavior is often attributed to the presence of structural inhomogeneities in the samples (due to e.g. Co-based nanoparticles) under study, which leads to distortion of the current paths under the action of the Lorentz force arising in a perpendicular magnetic field.
