Szczegóły publikacji
Opis bibliograficzny
Influence of irradiation by Swift Heavy Ions (SHI) on electronic magnetotransport in Sb $\delta$-layer in silicon / Alexander K. Fedotov, Uladzislaw E. GUMIENNIK, Vladimir A. Skuratov, Dmitry V. Yurasov, Julia A. Fedotova, Alexey V. Novikov, Alexander S. Fedotov, Pavel Yu. Apel // Physica. E, Low-Dimensional Systems & Nanostructures ; ISSN 1386-9477. — 2022 — vol. 138 art. no. 115047, s. 1–7. — Bibliogr. s. 6–7, Abstr. — Publikacja dostępna online od: 2021-12-10. — U. E. Gumiennik – dod. afiliacja: Institute for Nuclear Problems, Belarusian State University, Babrujskaja, Minsk, Belarus
Autorzy (8)
- Fedotov Alexander K.
- AGHGumiennik Władysław
- Skuratov Vladimir A.
- Yurasov Dmitry V.
- Fedotova Julia
- Novikov Alexey V.
- Fedotov Alexander S.
- Apel Pavel Yu.
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 139173 |
|---|---|
| Data dodania do BaDAP | 2022-02-18 |
| Tekst źródłowy | URL |
| DOI | 10.1016/j.physe.2021.115047 |
| Rok publikacji | 2022 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Physica, E, Low Dimensional Systems & Nanostructures |
Abstract
In the present paper we report about the influence of Swift Heavy Ions (SHI) irradiation on the electron transport in a silicon structure containing -layer heavy-doped with antimony. Temperature and magnetic field dependencies of the sheet resistance in the temperature range 2 300 K and magnetic field induction up to 8 T of the structure before and after the 167 MeV ion irradiation with 1 108 cm−2 – 5 1010 cm−2 ion fluences were measured. The observed curves for -layer have shown the competition between formation and annealing of defects induced by SHI irradiation due to electron stopping mechanism of ion energy loosing. Besides, at temperatures below 50 K, we observed the transition from exponential dependencies of to a semi-logarithmic lg ones both before and after the SHI exposure. Such behavior confirms the assumption that the low-temperature carrier transport is carried out mainly by the -layer. Moreover, transition from positive (PMR) to negative (NMR) relative magnetoresistance was observed when temperature decreasing. The appropriate characteristic times for the carrier scattering process in -layer at temperatures below 25 K were estimated from dependencies using the theory of 2D quantum corrections to Drude conductivity due to interference of electrons moving by self-crossing routes inside of -layer. Fitting of curves in frameworks of this theory indicates prevailing of phase breaking of electrons‘ wave function due to their scattering on weakly-localized defect centers induced by SHI irradiation.