Szczegóły publikacji
Opis bibliograficzny
Band structure engineering in $Sn_{1.03}Te$ through an In-induced resonant level / Shantanu Misra, Bartłomiej WIENDLOCHA, Janusz TOBOŁA, Florian Fesquet, Anne Dauscher, Bertrand Lenoir, Christophe Candolfi // Journal of Materials Chemistry. C ; ISSN 2050-7526. — 2020 — vol. 8 iss. 3, s. 977–988. — Bibliogr. s. 987–988. — Publikacja dostępna online od: 2019-10-30
Autorzy (7)
- Misra Shantanu
- AGHWiendlocha Bartłomiej
- AGHToboła Janusz Stefan
- Fesquet Florian
- Dauscher Anne
- Lenoir Bertrand
- Candolfi Christophe
Dane bibliometryczne
| ID BaDAP | 127613 |
|---|---|
| Data dodania do BaDAP | 2020-02-19 |
| Tekst źródłowy | URL |
| DOI | 10.1039/c9tc04407h |
| Rok publikacji | 2020 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Journal of Materials Chemistry, C |
Abstract
Narrow-band-gap IV-VI semiconductors represent a historically important class of thermoelectric materials. As one of the representative compounds of this class, SnTe has been reinvestigated over the last few years demonstrating its potential as a high-temperature p-type thermoelectric material. Here, we present a detailed study of the influence of very low doping levels of In, from 0.05% up to 2%, on the high-temperature transport properties of the self-compensated Sn1.03Te compound. Our results evidence a strong impact of In on the transport properties, consistent with the presence of an In-induced resonant level (RL) in the valence bands of Sn1.03Te. This peculiar behavior is confirmed by electronic band structure calculations performed using the Korringa-Kohn-Rostoker method with the coherent potential approximation (KKR-CPA) revealing a narrow and sharp peak in the density of states (DOS) induced by the hybridization of the In s-states with the electronic states of Sn1.03Te. This distortion in the DOS results in a spectacular increase in both the thermopower and electrical resistivity at 300 K. Although the influence of the RL is somewhat lessened at higher temperatures, a significant enhancement in the ZT values is nevertheless achieved with a peak ZT of 0.75 at 800 K which represents an increase of 35% over the values measured in Sn1.03Te. Of relevance for practical applications, the weak dependence of the RL on temperature leads to an enhanced average ZT value.
