Szczegóły publikacji
Opis bibliograficzny
An Sn-induced resonant level in $\beta-As_{2}Te_{3}$ / Bartłomiej WIENDLOCHA, Jean-Baptiste Vaney, Christophe Candolfi, Anne Dauscher, Bertrand Lenoir, Janusz TOBOŁA // Physical Chemistry Chemical Physics ; ISSN 1463-9076. — 2018 — vol. 20 iss. 18, s. 12948–12957. — Bibliogr. s. 12956–12957. — Publikacja dostępna online od: 2018-04-27
Autorzy (6)
- AGHWiendlocha Bartłomiej
- Vaney Jean-Baptiste
- Candolfi Christophe
- Dauscher Anne
- Lenoir Bertrand
- AGHToboła Janusz Stefan
Dane bibliometryczne
| ID BaDAP | 114262 |
|---|---|
| Data dodania do BaDAP | 2018-06-13 |
| DOI | 10.1039/c8cp00431e |
| Rok publikacji | 2018 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Physical Chemistry Chemical Physics |
Abstract
Distortion of the density of states by an impurity-induced resonant level has been shown to provide an effective strategy to improve the thermoelectric performance of semiconductors such as Bi2Te3, PbTe or SnTe. Here, combining first-principles calculations and transport property measurements, we demonstrate that Sn is a resonant impurity that distorts the valence band edge in p-type beta-As2Te3. This remarkable effect is characterized as a prominent, sharp peak in the electronic density of states near the Fermi level. To illustrate the particular influence of Sn on the thermopower of beta-As2Te3, the theoretical Ioffe-Pisarenko curve, computed within the Boltzmann transport theory, is compared with the experimental results obtained on three series of polycrystalline samples with substitution of Ga and Bi for As and I for Te. While Ga and I behave as conventional, rigid-band-like dopants and follow theoretical predictions, Sn results in significant deviations from the theoretical curve with a clear enhancement of the thermopower. Both electronic band structure calculations and transport property measurements provide conclusive evidence that this enhancement and hence, the good thermoelectric performances achieved at mid temperatures in beta-As2-xSnxTe3 can be attributed to a resonant level induced by Sn atoms. The possibility to induce resonant states in the electronic band structure of beta-As2Te3 opens new avenues to further optimize its thermoelectric performance.
