Szczegóły publikacji
Opis bibliograficzny
Kinetics of Ag-induced crystallization of amorphous Ge films probed by EELS plasmon mapping in TEM / Aleksandr KRYSHTAL, Sergey Bogatyrenko // W: NAP-2019 [Dokument elektroniczny] : proceedings of the 2019 IEEE 9th international conference on Nanomaterials: Applications & Properties : Odesa, Ukraine, September 15–20, 2019, Pt. 1 / Ministry of Education and Science of Ukraine, [etc.]. — Wersja do Windows. — Dane tekstowe. — Sumy : Sumy State University ; USA : IEEE, 2019. — Dysk Flash. — e-ISBN: 978-1-7281-2830-6. — S. 01SSI05-1. — Wymagania systemowe: Adobe Reader. — Bibliogr. s. 01SSI05-1. — Abstrakt dostępny online: https://nap.sumdu.edu.ua/index.php/nap/nap2019/paper/view/2934 [2019-10-03]
Autorzy (2)
- AGHKryshtal Oleksandr
- Bogatyrenko Sergey I.
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 124920 |
|---|---|
| Data dodania do BaDAP | 2019-10-08 |
| Rok publikacji | 2019 |
| Typ publikacji | materiały konferencyjne (aut.) |
| Otwarty dostęp |  |
| Wydawca | Institute of Electrical and Electronics Engineers (IEEE) |
Abstract
We investigate the interface interactions at the nanoscale in metal-semiconductor films by means of advanced in situ TEM techniques. Monochromated electron energy loss (EELS) spectral imaging was performed in the 350-450°C temperature range using a probe Cs-corrected FEI Titan G2 60-300 TEM equipped with Wildfire D6 heating holder. A plasmon resonance peaks of Ag and Ge, as well as Ge M ionization edge peak, were used for mapping the interphase boundaries and chemical elements at different stages of the reaction without substantial radiation damage of the area under study. A new insight into the mechanism of the metal-induced crystallization of amourous semiconductor films will be presented and discussed.
