Szczegóły publikacji
Opis bibliograficzny
Structural and electronic properties of the spin-filter material CrVTiAl with disorder / Gregory M. Stephen, Gianina Buda, Michelle E. Jamer, Christopher Lane, Stanisław KAPRZYK, Bernardo Barbiellini, David Graf, Laura H. Lewis, Arun Bansil, Don Heiman // Journal of Applied Physics ; ISSN 0021-8979. — 2019 — vol. 125 iss. 12 art. no. 123903, s. 123903-1–123903-6. — Bibliogr. s. 123903-5–123903-6, Abstr. — Publikacja dostępna online od: 2019-03-25. — S. Kaprzyk - dod. afiliacja: Northeastern University, Boston
Autorzy (10)
- Stephen Gregory M.
- Buda Gianina
- Jamer Michelle E.
- Lane Christopher
- AGHKaprzyk Stanisław
- Barbiellini Bernardo
- Graf David
- Lewis Laura H.
- Bansil Arun
- Heiman Don
Dane bibliometryczne
| ID BaDAP | 121489 |
|---|---|
| Data dodania do BaDAP | 2019-05-29 |
| Tekst źródłowy | URL |
| DOI | 10.1063/1.5079749 |
| Rok publikacji | 2019 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Journal of Applied Physics |
Abstract
The effects of chemical disorder on the electronic properties of the spin-filter material CrVTiAl are investigated experimentally and theoretically. Synchrotron X-ray diffraction experiments on bulk CrVTiAl and the associated Rietveld analysis indicate that the crystal structure consists primarily of a mixture of a partially ordered B2 phase, a fully disordered A2 phase, and a small component of an ordered L21 or Y phase. High temperature resistivity measurements confirm the existence of a bandgap. First-principles, all-electron, self-consistent electronic structure computations show that the chemically disordered A2 and B2 phases are metallic, while the spin-filter properties of the ideal Y-type phase are preserved in the presence of L21 disorder (Cr and V mixing). The Hall coefficient is found to decrease with increasing temperature, similar to the measured increase in the conductivity, indicating the presence of thermally activated semiconductor-like carriers. © 2019 Author(s).