Szczegóły publikacji
Opis bibliograficzny
Electrical and magnetic properties of thin films of the spin-filter material CrVTiAl / Gregory M. Stephen, Christopher Lane, Gianina Buda, David Graf, Stanisław KAPRZYK, Bernardo Barbiellini, Arun Bansil, Don Heiman // Physical Review. B ; ISSN 2469-9950. — Tytuł poprz.: Physical Review B, Condensed Matter and Materials Physics ; ISSN: 1098-0121. — 2019 — vol. 99 iss. 22 art. no. 224207, s. 224207-1–224207-8. — Bibliogr. s. 224207-7–224207-8. — Publikacja dostępna online od: 2019-06-28. — St. Kaprzyk - dod. afiliacja: Northeastern University, Boston, USA
Autorzy (8)
- Stephen Gregory M.
- Lane Christopher
- Buda Gianina
- Graf David
- AGHKaprzyk Stanisław
- Barbiellini Bernardo
- Bansil Arun
- Heiman Don
Dane bibliometryczne
| ID BaDAP | 123332 |
|---|---|
| Data dodania do BaDAP | 2019-11-07 |
| Tekst źródłowy | URL |
| DOI | 10.1103/PhysRevB.99.224207 |
| Rok publikacji | 2019 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Creative Commons | |
| Czasopismo/seria | Physical Review, B |
Abstract
The spin-filter material CrVTiAl is a promising candidate for producing highly spin-polarized currents at room temperature in a nonmagnetic architecture. Thin films of compensated-ferrimagnetic CrVTiAl have been grown, and their electrical and magnetic properties have been studied. The resistivity shows two-channel semiconducting behavior with one disordered gapless channel and a gapped channel with activation energy Delta E = 0.1-0.2 eV. Magnetoresistance measurements to B = 35 T provide values for the mobilities of the gapless channel, leading to an order of magnitude difference in the carrier effective masses, which are in reasonable accord with our density-functional-theory-based results. The density of states and electronic band structure are computed for permutations of the four sublattices arranged differently along the (111) body diagonal, yielding metallic (Cr-V-Al-Ti), spin-gapless (Cr-V-Ti-Al), and spin-filtering (Cr-Ti-V-Al) phases. Robustness of the spin-gapless phase to substitutional disorder is also considered.