Szczegóły publikacji
Opis bibliograficzny
Modeling of memristors under sinusoidal excitations with various frequencies / Bartłomiej GARDA, Zbigniew GALIAS // W: ICECS 2018 [Dokument elektroniczny] : 25th IEEE International Conference on Electronics, Circuits and Systems : December 9-12, 2018, Bordeaux, France : proceedings. — Wersja do Windows. — Dane tekstowe. — [Piscataway : IEEE], [2018]. — e-ISBN: 978-1-5386-9562-3. — S. 545–548. — Wymagania systemowe: Adobe Reader. — Bibliogr. s. 548, Abstr.
Autorzy (2)
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 120096 |
|---|---|
| Data dodania do BaDAP | 2019-02-13 |
| Tekst źródłowy | URL |
| DOI | 10.1109/ICECS.2018.8617926 |
| Rok publikacji | 2018 |
| Typ publikacji | materiały konferencyjne (aut.) |
| Otwarty dostęp |  |
| Wydawca | Institute of Electrical and Electronics Engineers (IEEE) |
| Konferencja | IEEE International Conference on Electronics, Circuits, and Systems 2018 |
Abstract
The problem of memristors modeling is investigated. The elements under study are self-directed-channel memristors with a tungsten dopant fabricated by the Knowm Inc. Memristors are exited using a sinusoidal waveform. Three memristor models are considered: the asymmetric Strukov model, the Strukov model with the Biolek window, and the VTEAM model. Parameters of the models are fitted to experimental data using the interior-point optimization algorithm. The possibility of modeling memristor's behavior in a wide frequency range using the models considered is studied.
