Szczegóły publikacji
Opis bibliograficzny
Modeling sinusoidally driven self-directed channel memristors / Bartłomiej GARDA, Zbigniew GALIAS // W: ICSES 2018 [Dokument elektroniczny] : 2018 International Conference on Signals and Electronic Systems : September 10–12, 2018, Kraków, Poland : proceedings / eds. Witold Machowski, Jacek Stępień. — Wersja do Windows. — Dane tekstowe. — [Piscataway] : IEEE, cop. 2018. — e-ISBN: 978-1-5386-6768-2. — S. 19–22. — Wymagania systemowe: Adobe Reader. — Bibliogr. s. 22, Abstr.
Autorzy (2)
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 118262 |
|---|---|
| Data dodania do BaDAP | 2018-11-30 |
| Tekst źródłowy | URL |
| DOI | 10.1109/ICSES.2018.8507323 |
| Rok publikacji | 2018 |
| Typ publikacji | materiały konferencyjne (aut.) |
| Otwarty dostęp |  |
| Wydawca | Institute of Electrical and Electronics Engineers (IEEE) |
| Konferencja | 2018 International Conference on Signals and Electronic Systems |
Abstract
In this work, the problem of memristors modeling is investigated. The elements under study are self-directed-channel memristors with a tungsten dopant fabricated by the Knowm Inc. Memristors are exited using a sinusoidal waveform. Three existing memristor models are considered: the Strukov model, the Biolek model, and the VTEAM model. Additionally, an asymmetric Strukov model is considered. Parameters of the models are fitted to experimental data using the interior-point optimization algorithm. Based on the results obtained comparison of models is carried out.
