Szczegóły publikacji
Opis bibliograficzny
Effect of inter- and intra-subband spin-orbit interactions on the operation of a spin transistor with a double quantum well structure / P. WÓJCIK, J. ADAMOWSKI // Semiconductor Science and Technology ; ISSN 0268-1242. — 2016 — vol. 31 no. 11 art. no. 115012, s. 1–12. — Bibliogr. s. 12, Abstr. — Publikacja dostępna online od: 2016-10-10
Autorzy (2)
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 102535 |
|---|---|
| Data dodania do BaDAP | 2016-12-20 |
| Tekst źródłowy | URL |
| DOI | 10.1088/0268-1242/31/11/115012 |
| Rok publikacji | 2016 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Semiconductor Science and Technology |
Abstract
We consider electron transport in a Datta–Das spin transistor within the two-subband model taking into account intra- and inter-subband spin–orbit (SO) interactions, and study the influence of inter-subband SO coupling on the spin transistor operation. Starting from the model in which the SO coupling constants are treated as parameters, we show that the inter-subband SO interaction strongly affects the ordinary conductance oscillations predicted for the transistor with single occupancy. Interestingly, we find that even in the absence of the intra-subband SO interaction, the conductance oscillates as a function of the inter-subband SO coupling constant. This phenomenon is explained as resulting from the inter-subband transition with spin flip. Next, we consider the realistic spin transistor model based on the gated Al${}_{0.48}$In${}_{0.52}$As/Ga${}_{0.47}$In${}_{0.53}$As double quantum well, for which the SO coupling constants are determined by the Schrödinger–Poisson approach. We show that the SO coupling constants rapidly change around V g = 0, which is desirable for spin transistor operation. We demonstrate that for high electron densities the inter-subband SO interaction starts to play the dominant role. The strong evidence of this interaction is the reduction of the conductance for gate voltage V g = 0, which leads to the reduction of the on/off conductance ratio.