Szczegóły publikacji
Opis bibliograficzny
High performance $Ni_{3}S_{2}/Ni$ film with three dimensional porous architecture as binder-free anode for lithium ion batteries / Zijia Zhang, Hailei Zhao, Qing Xia, Jason Allen, Zhipeng Zeng, Chunhui Gao, Zhaolin Li, Xuefei Du, Konrad ŚWIERCZEK // Electrochimica Acta : Journal of the International Society of Electrochemistry ; ISSN 0013-4686. — 2016 — vol. 211, s. 761–767. — Bibliogr. s. 767, Abstr. — Publikacja dostępna online od: 2016-06-21
Autorzy (9)
- Zhang Zijia
- Zhao Hailei
- Xia Qing
- Allen Jason
- Zeng Zhipeng
- Gao Chunhui
- Li Zhaolin
- Du Xuefei
- AGHŚwierczek Konrad
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 99528 |
|---|---|
| Data dodania do BaDAP | 2016-08-25 |
| Tekst źródłowy | URL |
| DOI | 10.1016/j.electacta.2016.06.103 |
| Rok publikacji | 2016 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Electrochimica Acta |
Abstract
A facile one-step method is developed for the direct growth of Ni3S2 nanoplates on a conductive nickel foam, which interwove together to form nest-like highly porous microstructure. When used as a binder- and conductive-agent-free electrode, the Ni3S2/Ni electrode demonstrates remarkable electrochemical performance with a superior cycling stability and a high rate capability, proving its potential applicability as a high performance anode for lithium ion batteries. The excellent electrochemical properties can be attributed to the 3-dimesional (3-D) structure of the Ni foam uniformly covered with a porous layer of Ni3S2 nanoplates. This structure provides excellent electrical contact between the active material and the current collector, a large electroactive surface area as well as well-sustained electrode integrity. The Ni3S2/Ni electrode maintains a reversible capacity of 623 mAh g−1 after 150 cycles at a current density of 0.1 A g−1, and delivers a high reversible capacity of 377 mAh g−1 at a high current density of 1.5 A g−1. The observed surplus capacity is found to originate from an interface storage process via a pseudocapacity-like storage mechanism. © 2016 Elsevier Ltd.
