Szczegóły publikacji
Opis bibliograficzny
Electrochemically deposited nanocrystalline InSb thin films and their electrical properties / K. E. HNIDA, S. Bassler, J. MECH, K. SZACIŁOWSKI, R. P. Socha, M. GAJEWSKA, K. Nielsch, M. PRZYBYLSKI, G. D. Sulka // Journal of Materials Chemistry . C ; ISSN 2050-7526. — 2016 — vol. 4 iss. 6, s. 1345–1350. — Bibliogr. s. 1349–1350. — Publikacja dostępna online od: 2016-01-13. — M. Przybylski - dod. afiliacja: ACMiN
Autorzy (9)
- AGHHnida-Gut Katarzyna
- Bassler S.
- AGHMech Justyna
- AGHSzaciłowski Konrad
- Socha Robert P.
- AGHGajewska Marta
- Nielsch Kornelius
- AGHPrzybylski Marek
- Sulka Grzegorz D.
Dane bibliometryczne
| ID BaDAP | 95975 |
|---|---|
| Data dodania do BaDAP | 2016-02-11 |
| Tekst źródłowy | URL |
| DOI | 10.1039/C5TC03656A |
| Rok publikacji | 2016 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Journal of Materials Chemistry, C |
Abstract
We present an electrochemical route to prepare nanocrystalline InSb thin films that can be transferred to an industrial scale. The morphology, composition, and crystallinity of the prepared uniform and compact thin films with a surface area of around 1 cm2 were investigated. The essential electrical characteristics such as conductivity, Seebeck coefficient, the type, concentration and mobility of charge carriers have been examined and compared with InSb nanowires obtained in the same system for electrochemical deposition (fixed pulse sequence, temperature, electrolyte composition, and system geometry). Moreover, obtained thin films show much higher band gap energy (0.53 eV) compared to the bulk material (0.17 eV) and InSb nanowires (0.195 eV).
