Szczegóły publikacji
Opis bibliograficzny
Charge sensitive amplifier for nanoseconds pulse processing time in CMOS 40 nm technology / Rafał KŁECZEK, Paweł GRYBOŚ, Robert SZCZYGIEŁ // W: MIXDES 2015 : mixed design of integrated circuits and systems : Toruń, Poland June 25–27, 2015 : book of abstracts of 22nd international conference / ed. Andrzej Napieralski. — Łódź : Lodz University of Technology. Department of Microelectronics and Computer Science, cop. 2015. — e-ISBN: 978-83-63578-06-0. — S. 82. — Abstr. — Pełny tekst na CD-ROMie. — eISBN 978-83-63578-06-0. — S. 292–296. — Wymagania systemowe: Adobe Reader ; napęd CD-ROM. — Bibliogr. s. 296, Abstr.
Autorzy (3)
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 91013 |
|---|---|
| Data dodania do BaDAP | 2015-07-22 |
| DOI | 10.1109/MIXDES.2015.7208529 |
| Rok publikacji | 2015 |
| Typ publikacji | materiały konferencyjne (aut.) |
| Otwarty dostęp |  |
| Konferencja | International Conference "Mixed Design of Integrated Circuits and Systems" 2015 |
Abstract
The level of requirements for a readout front-end electronics dedicated for X-ray imaging applications, such as: high count rate ability of input pulses, low noise, low power dissipation and low silicon area occupation noise, is still increasing. The question: what one can do to minimize silicon area and keep front-end electronics analog parameters at a desirable level at the same time, is still important especially in pixel based architecture imaging applications. We report on the design of a readout front-end electronics analog part in CMOS 40 nm technology dedicated for pixel semiconductor detectors. It consists only a charge sensitive amplifier operating in transimpedance mode, which feedback circuit is based on a Krummenacher architecture. It has power dissipation below tens of mu W, noise performance ENC around 100 e(-) rms and pulse peaking time t(p) around few ns.
