Szczegóły publikacji
Opis bibliograficzny
23552-channel IC for single photon counting pixel detectors with 75 $\mu m$ pitch, ENC of 89 $e^{-}$ rms, 19 $e^{-}$ rms offset spread and 3% rms gain spread / P. MAJ, P. GRYBOŚ, P. KMON, R. SZCZYGIEŁ // W: ESSCIRC 2014 [Dokument elektroniczny] : 40th European Solid-State Circuit Conference : Venezia Lido, Italy, September 22–26, 2014 : proceedings / ed. by Pietro Andreani, Andrea Bevilacqua, Gaudenzio Meneghesso. — Wersja do Windows. — Dane tekstowe. — Piscataway : IEEE, cop. 2014. — (Proceedings of ESSCIRC ; ISSN 1930-8833). — e-ISBN: 978-1-4799-5694-4. — S. 147–150. — Wymagania systemowe: Adobe Reader. — Bibliogr. s. 150, Abstr. — Dod. ISBN 978-1-4799-5696-8
Autorzy (4)
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 87211 |
|---|---|
| Data dodania do BaDAP | 2015-01-23 |
| Tekst źródłowy | URL |
| DOI | 10.1109/ESSCIRC.2014.6942043 |
| Rok publikacji | 2014 |
| Typ publikacji | materiały konferencyjne (aut.) |
| Otwarty dostęp |  |
| Konferencja | 40\textsuperscript{th} European Solid-State Circuit Conference |
| Czasopismo/seria | Proceedings of ESSCIRC |
Abstract
We report on the novel method of an in-pixel offset and gain correction for implementation in multichannel hybrid detector readout circuits. A prototype ASIC consisting of 23552 square shaped pixels of 75 mu m pitch was designed and fabricated in CMOS 130 nm technology. Each pixel containing charge sensitive amplifier, shaper, discriminator, correction circuits and two 14-bit counters has an equivalent noise charge of 89 e(-) rms and dissipates only 25 mu W. Tests prove its exceptional uniformity with an offset spread of 19e- rms and the gain spread of only 3%, rms what is good enough for color X-Ray imaging. The paper presents the architecture of the ASIC, a transistor level novel schematic of key blocks used for offset and gain trimming, the testing procedure and its results.
