Szczegóły publikacji
Opis bibliograficzny
Fabrication of nanocrystallites in the $SiO_{x}$ matrix applicable in microelectronics / Tomasz KOŁODZIEJ // W: Electron Technology Conference 2013 : Ryn, Poland, 16–20 April, 2013 / eds. Paweł Szczepański, Ryszard Kisiel, Ryszard S. Romaniuk. — [Bellingham] : SPIE, cop. 2013. — (Proceedings of SPIE / The International Society for Optical Engineering ; ISSN 0277-786X ; vol. 8902). — ISBN: 9780819495211. — S. 89020V-1–89020V-8. — Bibliogr. s. 89020V-7–89020V-8, Abstr.
Autor
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 75963 |
|---|---|
| Data dodania do BaDAP | 2013-09-25 |
| DOI | 10.1117/12.2031295 |
| Rok publikacji | 2013 |
| Typ publikacji | materiały konferencyjne (aut.) |
| Otwarty dostęp |  |
| Konferencja | Electron Technology Conference 2013 |
| Czasopismo/seria | Proceedings of SPIE / The International Society for Optical Engineering |
Abstract
The development of the technology of fabricating hydrogenated amorphous silicon (a-Si:H) or silicon oxide (SiOx) matrix with nanocrystalline inclusions (nc-Si:H) is the next step in improving the properties of electronic devices, such as solar cells, thin film transistors (TFT), floating gate transistors and others. Those films exhibit increased stability, absorption and carrier mobility. This paper is focused on the technology of manufacturing such films by means of Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD), which is use to fabricate electronic devices. The technology was developed in the Semiconductor Thin Films and Solar Cells Laboratory at the Department of Electronics at the AGH University of Science and Technology. The author describes the manufacturing process based on periodical variation of the process parameters, such as hydrogen to silane ratio (Rh), gas flows, RF power and pressure in the process chamber, during the deposition process. The author also presents the results of the measurements of typical samples with High Resolution Transmission Electron Microscopy (HRTEM), which confirms the existence of the nanocrystallites in the a-Si:H/SiOx matrix.
