Szczegóły publikacji
Opis bibliograficzny
Spin filter effect at room temperature in GaN/GaMnN ferromagnetic resonant tunnelling diode / P. WÓJCIK, J. ADAMOWSKI, M. WOŁOSZYN, B. J. SPISAK // Applied Physics Letters ; ISSN 0003-6951. — 2013 — vol. 102 iss. 24 art. no. 242411, s. 242411-1–242411-4. — Bibliogr. s. 242411-4, Abstr. — Publikacja dostępna online od: 2013-06-20
Autorzy (4)
Dane bibliometryczne
| ID BaDAP | 75036 |
|---|---|
| Data dodania do BaDAP | 2013-09-11 |
| Tekst źródłowy | URL |
| DOI | 10.1063/1.4811836 |
| Rok publikacji | 2013 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Applied Physics Letters |
Abstract
We have investigated the spin current polarization without the external magnetic field in the resonant tunneling diode with the emitter and quantum well layers made from the ferromagnetic GaMnN. For this purpose, we have applied the self-consistent Wigner-Poisson method and studied the spin-polarizing effect for the parallel and antiparallel alignments of the magnetization of the ferromagnetic layers. The results of our calculations show that the antiparallel magnetization is much more advantageous for the spin filter operation and leads to the full spin current polarization at low temperatures and 35% spin polarization of the current at room temperature. (C) 2013 AIP Publishing LLC.
