Szczegóły publikacji
Opis bibliograficzny
Electrical properties of $Nb-doped$ $BaTiO_{3}$ / K. KOWALSKI, M. Ijjaali, T. Bak, B. Dupre, J. Nowotny, M. RĘKAS, C. C. Sorrell // Journal of Physics and Chemistry of Solids ; ISSN 0022-3697 . — 2001 — vol. 62 iss. 3, s. 543–551. — Bibliogr. s. 551, Abstr.
Autorzy (7)
- AGHKowalski Kazimierz
- Ijjaali M.
- Bak T.
- Dupre B.
- Nowotny J.
- AGHRękas Mieczysław
- Sorrell Charles C.
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 7019 |
|---|---|
| Data dodania do BaDAP | 2001-11-24 |
| Tekst źródłowy | URL |
| DOI | 10.1016/S0022-3697(00)00213-4 |
| Rok publikacji | 2001 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Journal of Physics and Chemistry of Solids |
Abstract
This paper reports the results of the electrical conductivity measurements for Nb-doped BaTiO3 ceramics in the temperature range 1073-1373 K in both oxidizing and reducive atmospheres. The electrical conductivity was also applied to monitor the formation of Nb-doped BaTiO3. It is shown that the solid state reaction for the system BaTiO3-Nb2O3 takes place at 1573 K, but annealing at 1623 K is required to produce specimen of reproducible electrical properties. The solubility limit of Nb in stoichiometric BaTiO3 (Ba/Ti = 1) at 1573 K in air is 5 at%. The p(O-2) exponent of the electrical conductivity was determined (1/n(sigma) = -1/3.9). This exponent is consistent with the defect disorder model of Nb-doped BaTiO3 derived assuming that ionic charge compensation prevails. The activation energy of the electrical conductivity for Nb-doped BaTiO3 depends on both p(Oz) and Nb content.
