Szczegóły publikacji
Opis bibliograficzny
Signatures of antibonding hole ground states in exciton spectra of vertically coupled quantum dots in an electric field / T. CHWIEJ, B. SZAFRAN // Physical Review . B, Condensed Matter and Materials Physics ; ISSN 1098-0121. — Tytuł poprz.: Physical Review B : Condensed Matter. — 2010 — vol. 81 iss. 7, s. 075302-1–075302-8. — Bibliogr. s. 075302-8
Autorzy (2)
Dane bibliometryczne
| ID BaDAP | 51465 |
|---|---|
| Data dodania do BaDAP | 2010-04-23 |
| Tekst źródłowy | URL |
| DOI | 10.1103/PhysRevB.81.075302 |
| Rok publikacji | 2010 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Physical Review, B |
Abstract
We study exciton energy spectra in a pair of vertically coupled self-assembled quantum dots in external electric field. We perform a systematic comparison of the four-band Luttinger Kohn modeling producing an antibonding hole ground state with the single valence-band approximation in which the hole ground state has the bonding character. We find that the single-band approximation remains relevant for description of the electric field dependence of the photoluminescence spectrum for interdot barrier thickness of 7 nm or larger. We explain that for thinner barriers the antibonding character of the hole orbital can be deduced from the ground state recombination probability as a function of the electric field.
