Szczegóły publikacji
Opis bibliograficzny
Effect of free layer thickness and shape anisotropy on the transfer curves of MgO magnetic tunnel junctions / P. WIŚNIOWSKI, J. ;M. Almeida, S. Cardoso, N. P. Barradas, P. P. Freitas // Journal of Applied Physics ; ISSN 0021-8979 . — 2008 — vol. 103 iss. 7 art. no. 07A910, s. 07A910-1–07A910-3. — Bibliogr. s. 07A910-3. — Publikacja dostępna online od: 2008-03-03. — P. Wiśniowski - afiliacja: Instituto de Sistemas e Computadores-Microsistemas e Nanotecnologias (INESC-MN), Lisbon, Portugal. — 52nd annual conference on Magnetism and magnetic materials : November 05–09, 2007 : Tampa, Finland
Autorzy (5)
- Wiśniowski Piotr
- Almeida Joanna M.M.M. De
- Cardoso Susana
- Barradas Nuno Pessoa
- Freitas Paulo P.
Dane bibliometryczne
| ID BaDAP | 42670 |
|---|---|
| Data dodania do BaDAP | 2009-01-19 |
| Tekst źródłowy | URL |
| DOI | 10.1063/1.2838626 |
| Rok publikacji | 2008 |
| Typ publikacji | referat w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Journal of Applied Physics |
Abstract
A study of the combined effect of CoFeB free layer thickness, shape anisotropy, and annealing temperature on the transfer curves of MgO based magnetic tunnel junctions is presented. The response of the free layer changes gradually as its thickness decreases and shows hysteresis-free response for CoFeB <= 15.5 A. For junctions with CoFeB=15.5 A, the onset of hysteresis-free response depends on junction area and annealing temperature. Linearized magnetic tunnel junctions with dimensions down to 1.5x3 mu m(2) and sensitivity as high as 7.7%/Oe were achieved.
