Szczegóły publikacji

Opis bibliograficzny

Ground and excited states of few-electron systems in spherical quantum dots / B. SZAFRAN, J. ADAMOWSKI, S. BEDNAREK // Physica. E, Low-Dimensional Systems & Nanostructures ; ISSN 1386-9477. — 1999 — vol. 4 iss. 1, s. 1–10. — Bibliogr s. 10, Abstr.

Autorzy (3)

Słowa kluczowe

semiconductor nanostructuresquantum dotsartificial atom

Dane bibliometryczne

ID BaDAP2635
Data dodania do BaDAP2001-04-18
Tekst źródłowyURL
DOI10.1016/S1386-9477(98)00247-1
Rok publikacji1999
Typ publikacjiartykuł w czasopiśmie
Otwarty dostęptak
Czasopismo/seriaPhysica, E, Low Dimensional Systems & Nanostructures

Abstract

Energy spectra of two- and three-electron systems confined in semiconductor quantum dots, i.e., artificial helium and lithium atoms, are studied by the variational method under the assumption of the spherically symmetric confinement potential of finite depth. It is shown that the electron pairs and triples can form bound states if the quantum 'capacity', V(0)R(2), of the quantum dot, is sufficiently large (V(0) is the potential-well depth and R is the quantum-dot radius). The conditions of binding have been determined for the ground and excited states. The binding energy and dipole transition energy have been calculated for several QDs. It is found that the dipole transition energy for the one-, two-, and three-electron artificial atoms is nearly independent of the number of electrons.

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