Szczegóły publikacji
Opis bibliograficzny
LO-phonon-induced screening of electron-electron interaction in $D^{-}$ centres and quantum dots / J. ADAMOWSKI, A. KWAŚNIOWSKI, B. SZAFRAN // Journal of Physics : Condensed Matter ; ISSN 0953-8984. — 2005 — vol. 17 no. 28, s. 4489–4500. — Bibliogr. s. 4499–4500, Abstr.
Autorzy (3)
Dane bibliometryczne
| ID BaDAP | 23266 |
|---|---|
| Data dodania do BaDAP | 2005-09-22 |
| Tekst źródłowy | URL |
| DOI | 10.1088/0953-8984/17/28/008 |
| Rok publikacji | 2005 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Journal of Physics-Condensed Matter |
Abstract
A problem of screening of electron-electron interaction by LO phonons is investigated for bound two-electron systems in bulk semiconductors and semiconductor quantum dots. We consider a D- centre and a two-electron quantum dot and obtain the effective LO-phonon-induced interaction between the electrons, i.e., V-eff(r(12)) similar to e(2)/[epsilon(eff)(r(12))r(12)], where r(12) is the interelectron distance and epsilon(eff)(r(12)) is the effective phonon dielectric function. The calculated phonon dielectric function rapidly increases for small r(12) starting from the high-frequency dielectric constant, e(infinity), and reaches some constant value, (epsilon) over bar, at relatively small interelectron distances. We have found that-in most cases-(epsilon) over bar is less than the static dielectric constant, epsilon(s). Only in the weakly ionic compounds, like GaAs, (epsilon) over bar similar or equal to epsilon(s). We argue that-in the bound few-electron systems-(epsilon) over bar better approximates the average LO-phonon-induced screening than the commonly used epsilon(s), We have also shown that the coupling with LO phonons leads to the increase of the binding energy of the two-electron system confined in the quantum dot.
