Szczegóły publikacji
Opis bibliograficzny
Growth process of hybrid heavy metal (Pt)/antiferromagnet (NiO) polycrystalline structures, designed for spintronics applications / Maciej CZAPKIEWICZ, Krzysztof GROCHOT, Witold SKOWROŃSKI, Anna KOZIOŁ-RACHWAŁ, Casper Schippers, Henk Swagten, Michał Grzybowski, Marta GAJEWSKA, Jarosław KANAK // Applied Surface Science ; ISSN 0169-4332 . — Tytuł poprz.: Applications of Surface Science. — 2027 — vol. 752 art. no. 168285, s. 1-10. — Bibliogr. s. 9-10, Abstr. — Publikacja dostępna online od: 2026-09-02
Autorzy (9)
- AGHCzapkiewicz Maciej
- AGHGrochot Krzysztof
- AGHSkowroński Witold
- AGHKozioł-Rachwał Anna
- Schippers C. F.
- Swagten H. J. M.
- Grzybowski M. J.
- AGHGajewska Marta
- AGHKanak Jarosław
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 170242 |
|---|---|
| Data dodania do BaDAP | 2026-10-14 |
| Tekst źródłowy | URL |
| DOI | 10.1016/j.apsusc.2026.168285 |
| Rok publikacji | 2026 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp | |
| Czasopismo/seria | Applied Surface Science |
Abstract
The use of antiferromagnetic (AFM) materials in spintronic devices offers faster operation and immunity to external magnetic fields. Controlling the Néel vector of AFMs can be achieved through the spin–orbit effect, in which spin-polarized electrons from the neighboring material with significant spin–orbit coupling exert a torque on the AFM layer. Recently, the results of current-induced reorientation of spins were shown by Moriyama or Baldrati for insulating monocrystalline antiferromagnets (AFM) with an adjacent heavy metal layer, either with or without an additional ferromagnetic layer, deposited by means of molecular beam epitaxy (MBE). While the orientation of the crystallization direction of monocrystalline AFM layer against spin-polarized current is crucial for switching of the Néel vector, the slow growth rate of the monocrystalline layer is not suitable for practical spintronic applications. Here, we present structural analysis of the polycrystalline Pt and NiO growth on the following substrates: monocrystalline MgO(001) and MgO(111), and amorphous Si/SiOx (as a reference). Different crystal symmetries of NiO and Pt were observed, depending on the MgO substrate orientation, while the Si/SiOx substrate induces weakly textured polycrystalline growth. Our study demonstrates the feasibility of controlling AFM growth even in a fast magnetron sputtering process, enabling development of AFM-based spin–orbit-torque devices.